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Single/Double Sided Polished N-Type Si Dopant Gallium Arsenide Wafer Ld/LED Applications1
Optical Lens InstrumentGallium Arsenide WaferEpiready Wafer
Jiaozuo Commercial Finewin Co., Ltd.
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Product Description Product Description4 inch single/double sided polished N-Type Si dopant Gallium Arsenide wafer LD/LED applicationshncrystal.en.made-in-china.comWhat we can supply:GaAs wafers: Monocrystal ingots:2-6inchorientation: (100)(111)Type: Ntype Doped silicon, P type, doped Zn, Si undopedProduct Parameters ParameterGuaranteed / Actual ValuesUOMGrowth Method:VGF Conduct Type:S-I-N Dopant:Undoped Diameter:50.7± 0.1mmOrientation:(100)± 0.50 OF location/length:EJ [ 0-1-1]± 0.50/16±1 IF location/length:EJ [ 0-1 1 ]± 0.50/7±1 Resistivity:Min: 1.0 E8Max: 2.2 E8Ω·cmMobility:Min: 4500Max: 5482cm2/v.sEPD:Min: 700Max: 800/ cm2Thickness:350± 20μmEdge Rounding:0.25mmRLaser Marking:N/A TTV/TIR:Max: 10μmBOW:Max: 10μmWarp:Max: 10μmPartical Count:<50/wafer(for particle>0.3um) Surface Finish- front:Polished Surface Finish -back:Etched Epi-Ready:Yes ParameterGuaranteed / Actual ValuesUOMGrowth Method:VGF Conduct Type:S-I-N Dopant:Undoped Diameter:76.2± 0.2mmOrientation:(100) 00± 0.50 OF location/length:EJ [ 0-1-1]± 0.50/22±2 IF location/length:EJ [ 0-1 1 ]± 0.50/11±2 Resistivity:Min: 1E8Max: 1.03E8Ω·cmMobility:Min: 5613Max: 6000cm2/v.sEPD:Min: 700Max: 800Max:Thickness:625±20μmEdge Rounding:0.375mmRLaser Marking:N/A TTV:N/AμmSurface Finish- front:Polished Surface Finish -back:Etched Epi-Ready:Yes ParameterGuaranteed / Actual ValuesUOMGrowth Method:VGF Conduct Type:S-I-N Dopant:Undoped Diameter:100.0± 0.2mmOrientation:(100)± 0.30 OF location/length:EJ [ 0-1-1]± 0.50/32.5±1 IF location/length:EJ [ 0-1 1 ]± 0.50/18±1 Resistivity:Min: 1.5 E8Max: 2.0 E8Ω·cmMobility:Min: 4832Max: 4979cm2/v.sEPD:Min: 600Max: 700/ cm2Thickness:625± 25μmEdge Rounding:0.375mmRTTV/TIR:Max: 3μmBOW:Max: 4μmWarp:Max: 5μmPartical Count:<100/wafer(for particle>0.3um) Surface Finish- front:Polished Surface Finish -back:Polished Epi-Ready:Yes ParameterCustomer's RequirementsGuaranteed / Actual ValuesUOMGrowth Method:VGFVGF Conduct Type:S-C-PS-C-P Dopant:GaAs-ZnGaAs-Zn Diameter:50.8± 0.450.8± 0.4mmOrientation:(100)± 0.50(100)± 0.50 OF location/length:EJ [ 0-1-1]± 0.50/16±1EJ [ 0-1-1]± 0.50/16±1 IF location/length:EJ [ 0-1 1 ]± 0.50/7±1EJ [ 0-1 1 ]± 0.50/7±1 Ingot CC:Min: 1 E19Max: 5 E19Min: 1.4 E19Max: 1.9 E19/cm3Resistivity:Min: N/AMax: N/AMin: N/AMax: N/AΩ·cmMobility:Min: N/AMax: N/AMin: N/AMax: N/Acm2/v.sEPD:Max: 5000Min: 600Max: 700/ cm2Thickness:350±25350±25μmSurface Finish- front:Polished Polished Surface Finish -back:EtchedEtched Epi-Ready:YesYes Detailed PhotosPackage:Cleaning in class 100 roon, and then 25pcs packed in a cassette. Then we pack all your required wafers in the box well. FAQ:Q: What's the way of shipping and cost?A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc. (2) If you have your own express account, it's great.If not,we could help you ship them. Q: How to pay?A: T/T, Paypal, etcQ: What's your MOQ?A: (1) For inventory, the MOQ is 5pcs. (2) For customized products, the MOQ is 10pcs-25pcs.Q: What's the delivery time?A: (1) For the standard products For inventory: the delivery is 5 workdays after you place the order. For customized products: the delivery is 2 or 3 weeks after you place the order. (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.Q: Do you have standard products?A: Our standard products in stock.Q: Can I customize the products based on my need?A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
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