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Silicon Carbide Ceramic Tray – High Temperature, Wear Resistant, Thermally Conductive1
Ceramic MaterialWear ResistantThermally ConductiveSilicon Carbide Ceramic TraySilicon Carbide Ceramic Board
Suzhou Moat City Technology Ltd
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Product Description Silicon Carbide Board [MH-KX-SiC]Product FeaturesIntroducing our high-performance Silicon Carbide Shelves, specifically designed for high-temperature industrial applications:Exceptional Thermal Shock Resistance: These shelves exhibit excellent resistance to rapid temperature changes, ensuring long-term durability without bending or warping.High Strength and Stability: With a flexural strength of ≥49 MPa at both ambient and high temperatures, these shelves provide reliable support under high thermal stress.Non-Contaminating and Long Lifespan: Their high silicon carbide content prevents shedding of particles, ensuring the cleanliness of ceramic products and extending the lifespan of the shelves.ApplicationsSilicon carbide shelves are ideal for:Art and Daily Ceramics: Suitable for supporting various ceramics during high-temperature processing.Sanitary Ware: Provides durable shelving for sanitary ware production in kilns.Electromagnetic Materials and Foam Ceramics: Ensures reliable performance in the production of specialized materials.Grinding Wheels: Offers robust support for grinding wheel firing processes.Technical HighlightsHigh Refractoriness: Refractoriness under load is ≥1750°C, making these shelves ideal for use in extreme temperature conditions.Efficient Thermal Conductivity: Maintains flatness and integrity at a maximum service temperature of 1550°C.Compressive Strength: With a compressive strength of ≥127 MPa, the shelves withstand high mechanical stress during industrial processes.Technical ParametersSiC Content (%)≥90Bulk Density (g/cm3)2.75Max. Service Temperature (°C)1550Ambient Temperature Flexural Strength (MPa)≥49High Temperature Flexural Strength (1400°C?0.5h) (MPa)≥49Refractoriness under Load (°C)≥1750Open Porosity (%)7-8Compressive Strength (MPa)≥127Thermal Expansion at 1000°C (%)0.42-0.48
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