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Innovacera Black Hot Pressed Aln Ceramic Alumina Nitride Plate for Semiconductor Devices1
Ceramic MaterialAluminum Nitride Ceramic SubstrateAluminum Nitrie Ceramic Plate
Xiamen Innovacera Advanced Materials Co., Ltd.
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Product Description Products DescriptionHot pressed aluminum nitride (AlN) is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity. The applications for hot pressed AlN typically involve rigorous or abrasive environments and high-temperature thermal cycling.Hot Pressed Alumina Nitride Properties:PropertyUnitsValueFlexural Strength, MOR (20 °C)MPa300-460Fracture ToughnessMPa m1/22.75-6.0Thermal Conductivity (20 °C)W/m K80-140Coefficient of Thermal Expansion1 x 10-6/°C3.3-5.5Maximum Use Temperature°C800Dielectric Strength (6.35mm)ac-kV/mm16.0-19.7Dielectric Loss1MHz, 25 °C1 x 10-4 to 5 x 10-4Volume Resistivity (25°C)Ω-cm1013 to 1014 Features>High thermal conductivity>Expansion coefficient can match with semiconductor silicon chips>High insulation resistance and voltage withstand strength>Low dielectric constant and low dielectric loss>High mechanical strengthMaximum Size of Hot Press SinteringLength500 x width500 x height< 350 mmOuter diameter 500 x height < 500 mmWe can provide Hot Pressed Aluminum Nitride (HPAN) as required. Packing and StorageStandard Packing: Sealed bags in carton boxes. Special package is available on request.
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