Aluminium Nitride Ceramic Substrate – High Thermal Conductivity & Electrical Insulation¹

Product Description Aluminium Nitride Substrate [MH-ZT-Aluminium Nitride]Product FeaturesIntroducing our high-performance Aluminum Nitride (AlN) Substrate, designed to meet the demands of advanced electronic and thermal management applications:Exceptional Thermal Conductivity: More than 7 times higher thermal conductivity than alumina, ensuring superior heat dissipation.Silicon-Compatible Thermal Expansion: Coefficient of thermal expansion close to that of silicon, providing high reliability for large silicon chip loading and thermal cycling.High Electrical Insulation: Features excellent electrical insulation properties with a low dielectric constant.Superior Mechanical Strength: Offers better mechanical strength than alumina for improved structural integrity in high-performance applications.Corrosion Resistance: Exhibits good corrosion resistance to molten metals, extending the life of components.High Purity and Safety: Non-toxic, with very few impurities, ensuring safety and purity in demanding environments.ApplicationsAluminum Nitride substrates are ideal for:Heat Dissipation Substrates: Suitable for high-power electronics where efficient thermal management is essential.Substrate for LED Packaging: Ensures durability and performance for LED devices.Substrate for Semiconductors: Provides reliability and high thermal performance for semiconductor devices.Thin Film Circuit Substrate: Ideal for thin-film technology in advanced circuits.Substrate for Power Resistors: Designed for use in power resistor applications that require excellent heat dissipation.Technical HighlightsHigh Flexural Strength: With a flexural strength of 400 MPa and Young's modulus of 320 GPa, it provides excellent mechanical stability.Low Thermal Expansion: Coefficient of thermal expansion is 4.3 x 10 at 20°~300°C, matching the needs of temperature-sensitive applications.High Breakdown Strength: Ensures electrical integrity with a breakdown strength of ≥15 Kv/mm and dielectric constant of 9 at 1 MHz.Technical ParametersParameterValueMaterial NumberAlNDensity (g/cm3)3.33Thermal Conductivity (25°C) W/(m.k)≥170Flexural Strength (MPa)400Young's Modulus (GPa)320Vickers Hardness (GPa)≥11Fracture Toughness (MPa?√m)3.0Warpage (long edge) %≤2Surface Roughness (μm)0.2~0.6Coefficient of Thermal Expansion at 20°~300°C (10)4.3Coefficient of Thermal Expansion at 300°~800°C (10)5.0Breakdown Strength (Kv/mm)≥15Dielectric Constant (1 MHz)9Volume Resistivity (20°C, Ω?cm)≥101                     

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