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6inch 8inch 6" 8" Polished or Lapped Sides Aln Aluminum Nitride Wafer for Semiconductors Manufacturing1
Ceramic MaterialAluminum Nitride Ceramic WaferAluminum Nitride Wafer
Xiamen Innovacera Advanced Materials Co., Ltd.
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Product Description 6inch 8inch 6" 8" Polished or Lapped Sides AlN Aluminum Nitride Wafer Substrates for Semiconductors ManufacturingAluminum Nitride Wafer Substrates play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. Innovacera, a leading provider of these substrates,offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used. Aluminum Nitride Features Include:>High Thermal Conductivity>High Electrical Insulation>Low Dielectric Constant>Mechanical Strength and Stability>Corrosion Resistance Chemical and Thermal StabilityThe unique properties of Aluminum Nitride Wafer Substrates make them highly sought after in various semiconductor applications.The substrates are particularly valued in:>Power Electronics>RF and Microwave Devices>LED Manufacturing>Wafer Bonding TechnologyAluminum Nitride Wafer Substrates are indispensable in the modern semiconductor industry, offering a combination of thermal conductivity, electrical insulation, and mechanical strength that few materials can match. Innovacera's range of Aluminum Nitride (AIN) wafers, available in various sizes and customized options, provide the reliability and performance necessary for high-demand applications. As the semiconductor industry continues to advance, the role of AIN substrates will only become more critical, ensuring that devices remain efficient, durable, and capable of meeting the ever-growing demands of technology. Aluminium Nitride Material PropertiesMaterialALNItem No.INC-AN180INC-AN200INC-AN220ColorGrayGrayBeigeMain Content96%ALN96%ALN97%ALNMain CharacteristicsHigh Thermal Conductivity,Excellent Plasma ResistanceMain ApplicationsHeat Dissipating Parts,Plasma Resistance PartsBulk Density3.303.303.28Water Absorption000Vickers Hardness(Load 500g)10.09.59.Flexural Strength>=350>=325>=280Compressive Strength25002500-Young' Modulus of Elasticity320320320Poisson's Ratio0.240.240.24Fracture Toughness---Coefficient Linear Thermal Expansion40-400degree4.84.64.5Thermal Conductivity20degree180200220Specific Heat0.740.740.76Thermal Shocking Resistance---Volume Resistivity20degree>=10-14>=10-14>=10-13Dielectric Strength>=15>=15>=15Dielectric Constant1MHz98.88.6Loss Tangent*10-4556
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