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Polished Aln Aluminum Nitride Ceramic Disc for Silicon Wafer Handling and Processing1
Ceramic MaterialAlumina / Aluminum Nitride Ceramic Wafer / SpAluminum Nitride Wafer
Xiamen Innovacera Advanced Materials Co., Ltd.
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Product Description The Aluminum Nitride(AlN) ceramic has high thermal coductivity(5-10 times as the Alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance, and the linear expansion cofficient is similar with Si, which is widely used in communication compents, high power led, power electronic devices and other fields. Special spec products can be produced upon requests.1. High thermal conductivity, high flexural strength, high temperature2. Good electrical insulation3. Low dielectric constant and loss4. Able to be laser drilled, metallized, plated and brazed 1. RF/Microwave components2. Power modulus3. Power transformers4. High power LED package5. Laser diode sub-mounts6. LED chip sub-mount7. Microelectronic packages8. Transistors Aluminium Nitride Material PropertiesMaterialALNItem No.INC-AN180INC-AN200INC-AN220ColorGrayGrayBeigeMain Content96%ALN96%ALN97%ALNMain CharacteristicsHigh Thermal Conductivity,Excellent Plasma ResistanceMain ApplicationsHeat Dissipating Parts,Plasma Resistance PartsBulk Density3.303.303.28Water Absorption000Vickers Hardness(Load 500g)10.09.59.Flexural Strength>=350>=325>=280Compressive Strength25002500-Young' Modulus of Elasticity320320320Poisson's Ratio0.240.240.24Fracture Toughness---Coefficient Linear Thermal Expansion40-400degree4.84.64.5Thermal Conductivity20degree180200220Specific Heat0.740.740.76Thermal Shocking Resistance---Volume Resistivity20degree>=10-14>=10-14>=10-13Dielectric Strength>=15>=15>=15Dielectric Constant1MHz98.88.6Loss Tangent*10-4556
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