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99.7% Alumina Wafer Polishing Plate for Chemical Mechanical Polishing1
Grinder, Chemical Mechanical Polishing (CMP), Alumina Ceramic Wafer Polishing Plate
Pingxiang Chemshun Ceramics Co., Ltd.
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Product Description 99.7% Alumina Wafer Polishing Plate for Chemical Mechanical Polishing (CMP)99.7% Alumina Wafer Polishing Plate / Turn Table >>> Application:Chemshun Ceramics 99.7% Alumina Wafer Polishing Plate for Chemical Mechanical Polishing. As an important component of CMP chemical mechanical polishing process. CMP is the necessary for producing process of the sapphire and Wafer of the semiconductors. Chemshun Ceramics' high purity 99.7 % alumina ceramics sapphire polishing and lapping plates, Disc are shaped as PIBM producing process. Its an internaltional advanced technology. PIBM sucessful solve the key problem of crack and deformation of large size alumina ceramics.PIBM technology will open another window of fine ceramics.>>> The Process Photo of CMP:>>> Features of Chemshun Ceramics 997 Alumina Ceramic Polishing Plate : High Purity AluminaHigh rigidity (Hardness, Mechanical Strength, Flexural Strength, Wear Resistance)High chemical durabilitySurface shape & roughness controlFor Wide Variation of wafer size & Thickness Ability to Resist the Severe Microchip-processing equipment environmentHigh Quality & Pretty Price Compare to Japane Alumina Polishing Plate>>> Size:Disc, ring size below ?850mm, thickness 45mm.For example: D150mm, D360mm,D 600mm. Customized products with various size are accepted.>>> Main Parameter : UnitChemshun 99.7 Alumina CeramicsGeneral PropertiesAl2O3 contentwt%99.7-99.9Densitygm/cc3.94-3.97Color-IvoryWater absorption%0Mechanical PropertiesFlexural Strength(MOR) 20 oCMpa(psix10^3)440-550Elastic Modulus 20oCGPa (psix10^6)375Vickers HardnessGpa(kg/mm2) R45N>=17Bending StrengthGpa390Tensile Strength 25oCMPa(psix10^3)248Fracture Toughness (K I c)Mpa* m^1/24-5Thermal ProperitiesThermal conductivity(20oC)W/mk30Coefficient of Thermal expansion(25-1000oC)1x 10^-6/oC7.6Thermal Shock ResistanceoC200Maximum use temperatureoC1700Electrical ProperitiesDielectric Strength (1MHz)ac-kv/mm(ac v/mil)8.7Dielectric Constant(1 MHz)25oC9.7Volume Resistivityohm-cm (25oC)>10^14ohm-cm (500oC)2x10^12ohm-cm (1000oC)2x10^7
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