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6kw 10kw 15kw Microwave Plasma Mpcvd Mono Crystal/Polycrystalline Dimond Making/Growing/Growth Machine for CVD Diamond Growth Lab Diamond Machine1
Laboratory InstrumentsMpcvd MachineDiamond Making Machine
Jinan ACME Power Supply Co., Ltd.
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Product Description Product Description SpecificationParameter Description of Microwave Plasma (MPCVD) Equipment1. Equipment IntroductionThe ACME-2060, 6kW microwave plasma chemical vapor deposition (MPCVD) equipment is a multi-purpose, high stability, medium pressure microwave plasma (MPCVD) comprehensive processing equipment designed and developed to meet the specific requirements of users. It has advanced performance, complete functions, reasonable structure, convenient use, safety and reliability, and beautiful appearance, especially suitable for chemical vapor deposition (CVD) of single crystal and polycrystalline diamond films, and diamond like films; Material surface treatment and modification; The growth of low-temperature oxides and other fields. The system schematic diagram and dimensional diagram are as follows:2. Equipment composition and main characteristics:2.1. Microwave power sourceThe system adopts a 6kW/2450MHz switch type microwave power source. Its microwave power is continuously adjustable from 0.5 to 6kW; Stability better than ± 1%; Ripple degree is better than 2%, with good control performance; PLC provides convenient control; Adopting advanced magnetron filament voltage reduction tracking technology and high-precision magnetic field feedback adjustment and stability technology; We have adopted a comprehensive line safety locking control system, which ensures a long working life, excellent electrical performance, safety and reliability, and simple and convenient operation.2.2. Waveguide transmission unitThe system adopts an excellent microwave transmission system consisting of a high-performance microwave circulator, a three pin mixer, a water load with reflected wave sampling, and a connected waveguide segment waveguide. It ensures good isolation of the reflected wave from the magnetron, ensuring its stable operation. It can also conveniently adjust the optimal match when the plasma load changes, achieving the optimal transmission of microwave power. Through sampling of the reflected wave, the reflected power and real-time working status are displayed digitally.2.3. Mode Transformation and Downinjection Microwave Coupling CavityThis is a new generation of relatively mature microwave plasma coupling cavities, which are composed of cylindrical cavities operating in TM mode, gate button coaxial waveguide couplers with adjustable coaxial coupling probes, and plate quartz windows. By adjusting the waveguide short-circuit piston and coaxial coupling probe, microwave power can be efficiently coupled to the plasma discharge cavity over a wide operating range, generating high-density, high ionization degree, and large area uniform and stable microwave discharge. It adopts a double-layer water-cooled cavity wall to ensure stable operation.2.4. Multi port plasma discharge cavityThis system adopts a large volume discharge chamber with a double-layer water-cooled structure welded from stainless steel, and the upper end is connected to the microwave reaction chamber, which is the continuation part of the cylindrical cavity. It also has the following functional ports:1) A rotating door type feeding and discharging window is set up in front of the cavity, which can facilitate the discharge of substrate samples of no less than 50mm, and is equipped with a mesh microwave shielding window to clearly observe the discharge operation in the cavity during operation. Infrared temperature measurement is used for substrate temperature measurement at 300-1400 oC2) A specially designed inflation flange is used to provide the main mixing and inflation pipelines, as well as the inflation ring near the substrate, as an auxiliary inflation pipeline to form a double-layer gas feeding system.The above design makes the water-cooled discharge chamber of this port have a large volume and complete functions, especially suitable for the needs of small-scale plasma processing.2.5. Sample holder adjustmentThis device can electrically continuously adjust the cavity plate and sample substrate stage respectively to achieve the optimal state of the plasma discharge area, which is simple, reliable, and easy to control. It can meet the requirements of various plasma processing processes.2.6. Vacuum acquisition and measurementThe system uses a vacuum pump with a pumping speed of 8L/s as the pumping system, with an ultimate vacuum better than 6x10-1Pa. The system is equipped with medium to low pressure measurement gauges from the atmosphere to 10-1Pa and pressure resistance vacuum gauges from 100Pa to 100kPa. The measuring instruments are placed in the cabinet for easy control and reading.Static sealing adopts silicone rubber and metal sealing; The dynamic seal adopts a metal corrugated pipe structure. The working pressure control is completed using high-precision valves and controllers, with stable air pressure control and convenient adjustment.2.7. Multi channel gas mass flow control (MFC)To ensure the process requirements of MPCVD, the system adopts a 4-way gas mass flow control system supply and control system (MFC) composed of H2 (1SLM), CH4 (100SCCM), O2 (50SCCM), and N2 (50SCCM). The system adopts a reliable 1/4 'VCR interface built-in in the equipment cabinet, which is short, compact, and easy to control and adjust.2.8. The control system and cabinet System adopt a compact and concise main structure, as well as independent control units. Adopting PLC and touch screen multi parameter control, the entire equipment has a beautiful appearance and easy and reliable operation. The main control cabinet is equipped with automatic protection for overcurrent, overheating, water interruption, as well as power and fault indications.Microwave leakage is superior to national standards.3. Overall technical parameters of the equipment1) Microwave source and systemWorking frequency: 2450 ± 50MHzOutput power: 0.5~6kW continuously adjustablePower stability: better than ± 1% (at rated power level)Ripple degree: better than ± 2%Control method: PLC control, touch screen operationOutput waveguide interface: BJ-26, 22 with FD-26, 22 standard flangeInput power supply: 380VAC/50Hz, three-phase four wire, separate ground wire, 8kWCooling water flow rate: 6L/minSystem standing wave coefficient: VSWR ≤ 1.5Microwave leakage: ≤ 2mW/cm2 (better than the national standard GB10436-89)2) Microwave vacuum discharge cavitySize and working mode: Φ 200 x 300 (H) TM mode3) Vacuum acquisition: 8L/s vacuum pumpThe ultimate vacuum degree is better than 6x10-1Pa4) Gas mass flow rate: 4-way MFC (gas type and range can be determined by the user) H2 (1SLM), CH4 (100SCCM),O2 (50SCCM), N2 (50SCCM)5) Sample stage device: Sample stage diameter Φ 60 mm, water-cooled structure;Electric lifting adjustment distance: 0-80 mm6) Substrate temperature measurement: Infrared temperature measurement range 300~1400 oC (monochromatic)7) Total power supply: 380VAC ± 5%/50Hz, three-phase four wire, separate ground wire, 10kW8) Total cooling water: 15L/min, clean soft water, inlet water temperature 20 oC± 5 oC;9) External dimensions:~1.85 (L) x 0.9 (W) x 1.85 (H) m10) Working technical parameters:(1) The plasma discharge area of the system is not less than the diameter Φ 50mm; Stable discharge without deviation;(2) Working temperature: 600~1200 oC (infrared temperature measurement);(3) Working pressure: 1kPa~25kPa;(4) Realize long-term (>24 hours) continuous and stable operation under set output power, gas flow rate, and pressure conditions.4. Equipment composition and configuration Configuration List NO.Parts nameModelQTYRemark1Programmable microwave source6kW/2450MHz1 1-1MagnetronPM60AL1Panasonic, Japan2Microwave transmissionBJ-26 circulator, pin mixer, water load,transition waveguide, etc1Chengdu3Mode converter and Microwave coupling cavityTE10-TM0131Chengdu4Plasma working cavityIncludes inflatable flanges, quartz windows, and ports.1ACME5Sample stage and adjustmentElectric continuous lifting adjustment 6Vacuum acquisitionVacuum acquisition vacuum pump, valve, pipeline, and vacuum measurement system1ACME6-1Vacuum pump8L/s1Zhongke Keyi or Feiyue6-2Vacuum measurementVacuum gauge1Inficon6-3Work pressure controlPressure regulating valve and controller1ACME7Gas MFC unit4-way mass flow control and valves.1HORIBA 8Infrared thermometer300~1400oC1Kentech9Main control unitPLC main control, 10 inch touch operation screen, and cabinet1Siemens Spare parts listNO.Parts nameModelQTYRemark1Quartz windowD140 x 15mm1 2Metal and rubber sealing rings for quartz windows 1 Note: The entire equipment is guaranteed for one year (with the magnetron tube guaranteed by the supplier).3, Equipment acceptance standards:1). Limit pressure: The limit pressure measured by an external vacuum gauge should be less than 1.0 x 10-2Torr (within 20 minutes of continuous pumping by the vacuum pump);2). Vacuum leakage rate: The leakage rate of the vacuum chamber should be less than 100mtorr/h (holding pressure for more than 10 hours)3). MW radiation: Microwave radiation should be less than 2 mW/cm2, measured by a microwave measuring instrument (tested at 5.0 kW)4). Leakage: Confirm that the water pipe is not leaking5). Safety interlocking: Confirm that each interlocking action is correct6). System testing: System startup and operation function testing7). Polycrystalline diamond growth: Polycrystalline diamond growth was tested on 2-inch Si wafers for more than 24 hours, and the diamond distribution on the sample surface was uniform, without nitrogen vacancy related impurity peaks. The grown Si wafers were provided by the manufacturer.8). The equipment operates continuously for 72 hours to produce diamond single crystals or polycrystals, with a growth rate of 2 micrometers per hour. CertificationsCompany Profile
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