Microwave Plasma Chemical Vapor Deposition (MPCVD) for Diamond Growth¹

Product Description KS-MPCVD2060 Microwave Plasma Chemical Gas Phase Deposition (MPCVD) system is a multi-purpose, high-stable medium-pressure Microwave plasma (MPCVD) comprehensive processing equipment designed and developed for the specific requirements of users.It has advanced performance, perfect function, reasonable structure, convenient to use, safe and reliable, beautiful appearance, especially suitable for single crystal and polycrystal diamond film, diamond film chemical vapor deposition (CVD); material surface treatment and modification; low-temperature oxide growth and other fields.Technical Parameters: 1) Microwave sources and systems Operating frequency 2,450 M H z point frequency output power 0.1~ 6kW Continuous adjustable4 Power stability 1% (@ Steady-state) standard flange input power supply380VAC / 50Hz, three-phase and five-linecooling water flow rate 18 L/min System resident wave coefficient VSWR 1.5 Microwave leakage Compliance with national standards 2)Microwave vacuum discharge cavity Size and working mode Φ 200*300 (H) TM mode effective deposition area Φ 50mm Pressure control range 0.5KPa~30KPa Pressure control accuracy±15Pa3)productive power crystal growthGrowth rate of 10-15 m / H, single round growth, thickness greater than or equal to 1.6mm single crystal mass,There are basically no defects to the naked eye 4)vacuum and sub-atmospheric system Breaking mode Charge, enter, N2. Limit vacuum degree excel 5×10-1Pa Vacuum leakage rate ≤10-9Pa.m3/s ,voltage reise 24-Hour average pressure rise is less than 1Pa / H 5) Gas mass flow system control range 2%-100%F.S., Entrance pressure is 0.2-0.3MPa Gas type and measuring range H2 (1SLM), CH4 (100SCCM), O2 (10SCCM), N2 (20SCCM) 6) Sample table system Sample table diameter Φ 60 mm, water-cooled structure; sample table adjustment range0~15 mm Cinal plate adjustment range 0~60 mm 7) Base measurement Temperature control range(infrared temperature measurement);600~1200oC temperature control accuracy ± 5oC; Control range of the constant temperature area the temperature difference at each point of the molybdenum platform is 30oC 8)insulation resistance ≥5MΩ

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